262 lines
6.8 KiB
C
262 lines
6.8 KiB
C
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/*
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* Copyright (c) 2006-2023, RT-Thread Development Team
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*
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* SPDX-License-Identifier: Apache-2.0
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*
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* Change Logs:
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* Date Author Notes
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* 2018-12-5 SummerGift first version
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* 2019-3-2 jinsheng add Macro judgment
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* 2020-1-6 duminmin support single bank mode
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* 2020-5-17 yufanyufan77 support support H7
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* 2021-3-3 zhuyf233 fix some bugs
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*/
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#include "board.h"
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#ifdef BSP_USING_ON_CHIP_FLASH
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#include "drv_config.h"
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#include "drv_flash.h"
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#if defined(RT_USING_FAL)
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#include "fal.h"
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#endif
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//#define DRV_DEBUG
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#define LOG_TAG "drv.flash"
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#include <drv_log.h>
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/**
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* Read data from flash.
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* @note This operation's units is word.
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*
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* @param addr flash address
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* @param buf buffer to store read data
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* @param size read bytes size
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*
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* @retval The length of bytes that have been read
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*/
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int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
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{
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size_t i;
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if ((addr + size - 1) > FLASH_END)
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{
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LOG_E("read outrange flash size! addr is (0x%p)", (void *)(addr + size));
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return -RT_ERROR;
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}
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for (i = 0; i < size; i++, buf++, addr++)
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{
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*buf = *(rt_uint8_t *) addr;
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}
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return size;
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}
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/**
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* Write data to flash.
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* @note This operation's units is word.
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* @note This operation must after erase. @see flash_erase.
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*
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* @param addr flash address
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* @param buf the write data buffer
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* @param size write bytes size
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*
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* @return The length of bytes that have been written
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*/
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int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size)
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{
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rt_err_t result = RT_EOK;
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rt_uint32_t end_addr = addr + size - 1, write_addr;
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rt_uint32_t write_granularity = FLASH_NB_32BITWORD_IN_FLASHWORD * 4;
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rt_uint32_t write_size = write_granularity;
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rt_uint8_t write_buffer[32] = {0};
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if ((end_addr) > FLASH_END)
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{
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LOG_E("write outrange flash size! addr is (0x%p)", (void *)(addr + size));
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return -RT_EINVAL;
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}
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if(addr % 32 != 0)
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{
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LOG_E("write addr must be 32-byte alignment");
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return -RT_EINVAL;
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}
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if (size < 1)
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{
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return -RT_EINVAL;
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}
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HAL_FLASH_Unlock();
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write_addr = (uint32_t)buf;
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__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR);
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while (addr < end_addr)
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{
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if(end_addr - addr + 1 < write_granularity)
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{
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write_size = end_addr - addr + 1;
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for(size_t i = 0; i < write_size; i++)
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{
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write_buffer[i] = *((uint8_t *)(write_addr + i));
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}
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write_addr = (uint32_t)((rt_uint32_t *)write_buffer);
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}
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if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD, addr, write_addr) == HAL_OK)
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{
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for(rt_uint8_t i = 0; i < write_size; i++)
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{
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if (*(rt_uint8_t *)(addr + i) != *(rt_uint8_t *)(write_addr + i))
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{
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result = -RT_ERROR;
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goto __exit;
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}
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}
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addr += write_granularity;
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write_addr += write_granularity;
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}
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else
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{
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result = -RT_ERROR;
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goto __exit;
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}
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}
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__exit:
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HAL_FLASH_Lock();
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if (result != RT_EOK)
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{
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return result;
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}
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return size;
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}
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/**
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* Erase data on flash.
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* @note This operation is irreversible.
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* @note This operation's units is different which on many chips.
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*
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* @param addr flash address
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* @param size erase bytes size
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*
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* @return result
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*/
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int stm32_flash_erase(rt_uint32_t addr, size_t size)
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{
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rt_err_t result = RT_EOK;
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rt_uint32_t SECTORError = 0;
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if ((addr + size - 1) > FLASH_END)
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{
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LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void *)(addr + size));
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return -RT_EINVAL;
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}
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rt_uint32_t addr_bank1 = 0;
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rt_uint32_t size_bank1 = 0;
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#ifdef FLASH_BANK_2
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rt_uint32_t addr_bank2 = 0;
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rt_uint32_t size_bank2 = 0;
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#endif
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if((addr + size) < FLASH_BANK2_BASE)
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{
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addr_bank1 = addr;
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size_bank1 = size;
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#ifdef FLASH_BANK_2
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size_bank2 = 0;
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#endif
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}
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else if(addr >= FLASH_BANK2_BASE)
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{
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size_bank1 = 0;
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#ifdef FLASH_BANK_2
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addr_bank2 = addr;
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size_bank2 = size;
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#endif
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}
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else
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{
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addr_bank1 = addr;
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size_bank1 = FLASH_BANK2_BASE - addr_bank1;
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#ifdef FLASH_BANK_2
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addr_bank2 = FLASH_BANK2_BASE;
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size_bank2 = addr + size - FLASH_BANK2_BASE;
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#endif
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}
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/*Variable used for Erase procedure*/
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FLASH_EraseInitTypeDef EraseInitStruct;
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/* Unlock the Flash to enable the flash control register access */
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HAL_FLASH_Unlock();
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EraseInitStruct.TypeErase = FLASH_TYPEERASE_SECTORS;
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EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3;
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SCB_DisableDCache();
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if(size_bank1)
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{
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EraseInitStruct.Sector = (addr_bank1 - FLASH_BANK1_BASE) / FLASH_SECTOR_SIZE;
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EraseInitStruct.NbSectors = (addr_bank1 + size_bank1 -1 - FLASH_BANK1_BASE) / FLASH_SECTOR_SIZE - EraseInitStruct.Sector + 1;
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EraseInitStruct.Banks = FLASH_BANK_1;
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if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK)
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{
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result = -RT_ERROR;
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goto __exit;
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}
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}
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#ifdef FLASH_BANK_2
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if(size_bank2)
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{
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EraseInitStruct.Sector = (addr_bank2 - FLASH_BANK2_BASE) / FLASH_SECTOR_SIZE;
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EraseInitStruct.NbSectors = (addr_bank2 + size_bank2 -1 - FLASH_BANK2_BASE) / FLASH_SECTOR_SIZE - EraseInitStruct.Sector + 1;
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EraseInitStruct.Banks = FLASH_BANK_2;
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if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK)
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{
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result = -RT_ERROR;
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goto __exit;
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}
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}
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#endif
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__exit:
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SCB_EnableDCache();
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HAL_FLASH_Lock();
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if (result != RT_EOK)
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{
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return result;
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}
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LOG_D("erase done: addr (0x%p), size %d", (void *)addr, size);
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return size;
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}
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#if defined(RT_USING_FAL)
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static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size);
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static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size);
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static int fal_flash_erase_128k(long offset, size_t size);
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const struct fal_flash_dev stm32_onchip_flash_128k = { "onchip_flash_128k", STM32_FLASH_START_ADRESS, FLASH_SIZE_GRANULARITY_128K, (128 * 1024), {NULL, fal_flash_read_128k, fal_flash_write_128k, fal_flash_erase_128k} };
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static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size)
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{
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return stm32_flash_read(stm32_onchip_flash_128k.addr + offset, buf, size);
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}
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static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size)
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{
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return stm32_flash_write(stm32_onchip_flash_128k.addr + offset, buf, size);
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}
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static int fal_flash_erase_128k(long offset, size_t size)
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{
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return stm32_flash_erase(stm32_onchip_flash_128k.addr + offset, size);
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}
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#endif
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#endif /* BSP_USING_ON_CHIP_FLASH */
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