/* * Copyright (c) 2006-2023, RT-Thread Development Team * * SPDX-License-Identifier: Apache-2.0 * * Change Logs: * Date Author Notes * 2018-12-5 SummerGift first version * 2019-3-2 jinsheng add Macro judgment * 2020-1-6 duminmin support single bank mode * 2020-5-17 yufanyufan77 support support H7 * 2021-3-3 zhuyf233 fix some bugs */ #include "board.h" #ifdef BSP_USING_ON_CHIP_FLASH #include "drv_config.h" #include "drv_flash.h" #if defined(RT_USING_FAL) #include "fal.h" #endif //#define DRV_DEBUG #define LOG_TAG "drv.flash" #include /** * Read data from flash. * @note This operation's units is word. * * @param addr flash address * @param buf buffer to store read data * @param size read bytes size * * @retval The length of bytes that have been read */ int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size) { size_t i; if ((addr + size - 1) > FLASH_END) { LOG_E("read outrange flash size! addr is (0x%p)", (void *)(addr + size)); return -RT_ERROR; } for (i = 0; i < size; i++, buf++, addr++) { *buf = *(rt_uint8_t *) addr; } return size; } /** * Write data to flash. * @note This operation's units is word. * @note This operation must after erase. @see flash_erase. * * @param addr flash address * @param buf the write data buffer * @param size write bytes size * * @return The length of bytes that have been written */ int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size) { rt_err_t result = RT_EOK; rt_uint32_t end_addr = addr + size - 1, write_addr; rt_uint32_t write_granularity = FLASH_NB_32BITWORD_IN_FLASHWORD * 4; rt_uint32_t write_size = write_granularity; rt_uint8_t write_buffer[32] = {0}; if ((end_addr) > FLASH_END) { LOG_E("write outrange flash size! addr is (0x%p)", (void *)(addr + size)); return -RT_EINVAL; } if(addr % 32 != 0) { LOG_E("write addr must be 32-byte alignment"); return -RT_EINVAL; } if (size < 1) { return -RT_EINVAL; } HAL_FLASH_Unlock(); write_addr = (uint32_t)buf; __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR); while (addr < end_addr) { if(end_addr - addr + 1 < write_granularity) { write_size = end_addr - addr + 1; for(size_t i = 0; i < write_size; i++) { write_buffer[i] = *((uint8_t *)(write_addr + i)); } write_addr = (uint32_t)((rt_uint32_t *)write_buffer); } if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD, addr, write_addr) == HAL_OK) { for(rt_uint8_t i = 0; i < write_size; i++) { if (*(rt_uint8_t *)(addr + i) != *(rt_uint8_t *)(write_addr + i)) { result = -RT_ERROR; goto __exit; } } addr += write_granularity; write_addr += write_granularity; } else { result = -RT_ERROR; goto __exit; } } __exit: HAL_FLASH_Lock(); if (result != RT_EOK) { return result; } return size; } /** * Erase data on flash. * @note This operation is irreversible. * @note This operation's units is different which on many chips. * * @param addr flash address * @param size erase bytes size * * @return result */ int stm32_flash_erase(rt_uint32_t addr, size_t size) { rt_err_t result = RT_EOK; rt_uint32_t SECTORError = 0; if ((addr + size - 1) > FLASH_END) { LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void *)(addr + size)); return -RT_EINVAL; } rt_uint32_t addr_bank1 = 0; rt_uint32_t size_bank1 = 0; #ifdef FLASH_BANK_2 rt_uint32_t addr_bank2 = 0; rt_uint32_t size_bank2 = 0; #endif if((addr + size) < FLASH_BANK2_BASE) { addr_bank1 = addr; size_bank1 = size; #ifdef FLASH_BANK_2 size_bank2 = 0; #endif } else if(addr >= FLASH_BANK2_BASE) { size_bank1 = 0; #ifdef FLASH_BANK_2 addr_bank2 = addr; size_bank2 = size; #endif } else { addr_bank1 = addr; size_bank1 = FLASH_BANK2_BASE - addr_bank1; #ifdef FLASH_BANK_2 addr_bank2 = FLASH_BANK2_BASE; size_bank2 = addr + size - FLASH_BANK2_BASE; #endif } /*Variable used for Erase procedure*/ FLASH_EraseInitTypeDef EraseInitStruct; /* Unlock the Flash to enable the flash control register access */ HAL_FLASH_Unlock(); EraseInitStruct.TypeErase = FLASH_TYPEERASE_SECTORS; EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3; SCB_DisableDCache(); if(size_bank1) { EraseInitStruct.Sector = (addr_bank1 - FLASH_BANK1_BASE) / FLASH_SECTOR_SIZE; EraseInitStruct.NbSectors = (addr_bank1 + size_bank1 -1 - FLASH_BANK1_BASE) / FLASH_SECTOR_SIZE - EraseInitStruct.Sector + 1; EraseInitStruct.Banks = FLASH_BANK_1; if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK) { result = -RT_ERROR; goto __exit; } } #ifdef FLASH_BANK_2 if(size_bank2) { EraseInitStruct.Sector = (addr_bank2 - FLASH_BANK2_BASE) / FLASH_SECTOR_SIZE; EraseInitStruct.NbSectors = (addr_bank2 + size_bank2 -1 - FLASH_BANK2_BASE) / FLASH_SECTOR_SIZE - EraseInitStruct.Sector + 1; EraseInitStruct.Banks = FLASH_BANK_2; if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK) { result = -RT_ERROR; goto __exit; } } #endif __exit: SCB_EnableDCache(); HAL_FLASH_Lock(); if (result != RT_EOK) { return result; } LOG_D("erase done: addr (0x%p), size %d", (void *)addr, size); return size; } #if defined(RT_USING_FAL) static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size); static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size); static int fal_flash_erase_128k(long offset, size_t size); const struct fal_flash_dev stm32_onchip_flash_128k = { "onchip_flash_128k", STM32_FLASH_START_ADRESS, FLASH_SIZE_GRANULARITY_128K, (128 * 1024), {NULL, fal_flash_read_128k, fal_flash_write_128k, fal_flash_erase_128k} }; static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size) { return stm32_flash_read(stm32_onchip_flash_128k.addr + offset, buf, size); } static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size) { return stm32_flash_write(stm32_onchip_flash_128k.addr + offset, buf, size); } static int fal_flash_erase_128k(long offset, size_t size) { return stm32_flash_erase(stm32_onchip_flash_128k.addr + offset, size); } #endif #endif /* BSP_USING_ON_CHIP_FLASH */