302 lines
14 KiB
C
302 lines
14 KiB
C
/*
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* @Description: file content
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* @Author: CK.Zh
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* @Date: 2020-04-27 18:01:58
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* @LastEditors: CK.Zh
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* @LastEditTime: 2020-04-29 17:49:01
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*/
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#include "coulomb.h"
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coulomb_t coulomb;
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//静态方法，检测设备是否就绪
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static HAL_StatusTypeDef is_coulomb_ready()
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{
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return HAL_I2C_IsDeviceReady(&hi2c1,COULOMB_ADDR,3,20);
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}
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//静态方法，写寄存器
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static HAL_StatusTypeDef coulomb_write_reg(uint8_t addr,uint8_t* pData)
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{
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return HAL_I2C_Mem_Write(&hi2c1,COULOMB_ADDR ,addr,1,pData, 1, 10);
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}
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//静态方法，读寄存器
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static HAL_StatusTypeDef coulomb_read_reg(uint8_t addr,uint8_t* pData)
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{
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return HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,addr,1,pData, 1, 10);
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}
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/**
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* @description: 静态方法，字节拼接
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* @param pData 数组指针
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* @param msbIndex 高字节在数组中的位置
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* @param lsbIndex 低字节在数组中的位置
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* @return:
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*/
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static uint16_t uint8_to_uint16(uint8_t *pData,uint8_t msbIndex,uint8_t lsbIndex)
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{
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return ((pData[msbIndex]<<8) | pData[lsbIndex]);
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}
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/**
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* @description: 静态方法，字节拆解
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* @param data
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* @return:
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*/
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static uint8_t uint16_to_uint8_msb(uint16_t data)
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{
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return ((data>>8) & 0xff);
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}
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/**
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* @description: 静态方法，字节拆解
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* @param data
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* @return:
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*/
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static uint8_t uint16_to_uint8_lsb(uint16_t data)
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{
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return ((data ) & 0xff);
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}
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/**
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* @description: 初始化配置参数(寄存器上电后的缺省值)
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* @param {type}
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* @return:
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*/
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// void coulomb_write_config_load_default()
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// {
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// coulomb.write.raw.control = 0xEC;
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// coulomb.write.raw.accumulated_charge = 0x7fff;
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// coulomb.write.raw.charge_threshold_H = 0xffff;
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// coulomb.write.raw.charge_threshold_L = 0x0000;
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// coulomb.write.raw.voltage_threshold_H = 0xffff;
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// coulomb.write.raw.voltage_threshold_L = 0x0000;
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// coulomb.write.raw.current_threshold_H = 0xffff;
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// coulomb.write.raw.current_threshold_L = 0x0000;
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// coulomb.write.raw.temperature_threshold_H = 0xff;
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// coulomb.write.raw.temperature_threshold_L = 0x00;
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// }
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/**
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* @description: 初始化配置参数
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* @param {type}
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* @return:
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*/
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void coulomb_write_config_load()
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{
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//控制寄存器配置
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coulomb.write.actual.control.adc_mode = 0b00;
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coulomb.write.actual.control.prescaler = 0b111;
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coulomb.write.actual.control.alcc_configure = 0b10;
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coulomb.write.actual.control.shutdown = 0b00;
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//剩余容量重写入
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coulomb.write.actual.accumulated_charge = 2;
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//充电阈值上限
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coulomb.write.actual.charge_threshold_H = 20;
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//充电阈值下限
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coulomb.write.actual.charge_threshold_L = 1;
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//电压阈值上限
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coulomb.write.actual.voltage_threshold_H = 15;
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//电压阈值下限
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coulomb.write.actual.voltage_threshold_L = 9.5;
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//电流阈值上限
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coulomb.write.actual.current_threshold_H = 10;
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//电流阈值下限
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coulomb.write.actual.current_threshold_L = -10;
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//温度阈值上限
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coulomb.write.actual.temperature_threshold_H = 60;
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//温度阈值下限
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coulomb.write.actual.temperature_threshold_L = -15;
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}
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/**
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* @description: 将准备写入的目标参数转化成寄存器格式
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* @param {type}
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* @return:
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*/
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void coulomb_write_config_actual_to_raw()
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{
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//控制寄存器
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coulomb.write.raw.control = (coulomb.write.actual.control.adc_mode << 6) | \
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(coulomb.write.actual.control.prescaler << 3) | \
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(coulomb.write.actual.control.alcc_configure << 1) | \
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(coulomb.write.actual.control.shutdown ) ;
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//累计电量
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coulomb.write.raw.accumulated_charge = (uint16_t)((coulomb.write.actual.accumulated_charge / 30.0) * 32767 + 32767);
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//充电阈值上限
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coulomb.write.raw.charge_threshold_H = (uint16_t)((coulomb.write.actual.charge_threshold_H / 30.0) * 32767 + 32767);
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//充电阈值下限
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coulomb.write.raw.charge_threshold_L = (uint16_t)((coulomb.write.actual.charge_threshold_L / 30.0) * 32767 + 32767);
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//电压阈值上限
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coulomb.write.raw.voltage_threshold_H = (uint16_t)((coulomb.write.actual.voltage_threshold_H / 23.6) * 65535);
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//电压阈值下限
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coulomb.write.raw.voltage_threshold_L = (uint16_t)((coulomb.write.actual.voltage_threshold_L / 23.6) * 65535);
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//电流阈值上限
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coulomb.write.raw.current_threshold_H = (uint16_t)((coulomb.write.actual.current_threshold_H / 30.0) * 32767 + 32767);
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//电流阈值下限
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coulomb.write.raw.current_threshold_L = (uint16_t)((coulomb.write.actual.current_threshold_L / 30.0) * 32767 + 32767);
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//温度阈值上限
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coulomb.write.raw.temperature_threshold_H = ((uint16_t)((coulomb.write.actual.temperature_threshold_H + 273.15) / 510.0 * 65535)) & 0xFF00;//清空低字节
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//温度阈值下限
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coulomb.write.raw.temperature_threshold_L = ((uint16_t)((coulomb.write.actual.temperature_threshold_L + 273.15) / 510.0 * 65535)) & 0xFF00;//清空低字节
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}
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/**
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* @description: 写入寄存器配置
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* @param {type}
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* @return:
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*/
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bool coulomb_write_config()
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{
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uint8_t writeData[COULOMB_REG_NUM] = {0};
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//控制寄存器
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writeData[LTC2943_CONTROL_REG] = coulomb.write.raw.control;
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//累计电量
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writeData[LTC2943_ACCUM_CHARGE_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.accumulated_charge);
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writeData[LTC2943_ACCUM_CHARGE_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.accumulated_charge);
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//充电阈值上限
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writeData[LTC2943_CHARGE_THRESH_HIGH_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.charge_threshold_H);
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writeData[LTC2943_CHARGE_THRESH_HIGH_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.charge_threshold_H);
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//充电阈值下限
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writeData[LTC2943_CHARGE_THRESH_LOW_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.charge_threshold_L);
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writeData[LTC2943_CHARGE_THRESH_LOW_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.charge_threshold_L);
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//电压阈值上限
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writeData[LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.voltage_threshold_H);
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writeData[LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.voltage_threshold_H);
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//电压阈值下限
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writeData[LTC2943_VOLTAGE_THRESH_LOW_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.voltage_threshold_L);
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writeData[LTC2943_VOLTAGE_THRESH_LOW_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.voltage_threshold_L);
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//电流阈值上限
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writeData[LTC2943_CURRENT_THRESH_HIGH_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.current_threshold_H);
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writeData[LTC2943_CURRENT_THRESH_HIGH_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.current_threshold_H);
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//电流阈值下限
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writeData[LTC2943_CURRENT_THRESH_LOW_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.current_threshold_L);
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writeData[LTC2943_CURRENT_THRESH_LOW_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.current_threshold_L);
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//温度阈值上限
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writeData[LTC2943_TEMPERATURE_THRESH_HIGH_REG] = uint16_to_uint8_msb(coulomb.write.raw.temperature_threshold_H);
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//温度阈值下限
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writeData[LTC2943_TEMPERATURE_THRESH_LOW_REG] = uint16_to_uint8_msb(coulomb.write.raw.temperature_threshold_L);
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coulomb.ready = (is_coulomb_ready()==HAL_OK) ? true : false;
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if(coulomb.ready)
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{
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coulomb_write_reg(LTC2943_CONTROL_REG,&writeData[LTC2943_CONTROL_REG]);
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coulomb_write_reg(LTC2943_ACCUM_CHARGE_MSB_REG,&writeData[LTC2943_ACCUM_CHARGE_MSB_REG]);
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coulomb_write_reg(LTC2943_ACCUM_CHARGE_LSB_REG,&writeData[LTC2943_ACCUM_CHARGE_LSB_REG]);
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coulomb_write_reg(LTC2943_CHARGE_THRESH_HIGH_MSB_REG,&writeData[LTC2943_CHARGE_THRESH_HIGH_MSB_REG]);
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coulomb_write_reg(LTC2943_CHARGE_THRESH_HIGH_LSB_REG,&writeData[LTC2943_CHARGE_THRESH_HIGH_LSB_REG]);
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coulomb_write_reg(LTC2943_CHARGE_THRESH_LOW_MSB_REG,&writeData[LTC2943_CHARGE_THRESH_LOW_MSB_REG]);
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coulomb_write_reg(LTC2943_CHARGE_THRESH_LOW_LSB_REG,&writeData[LTC2943_CHARGE_THRESH_LOW_LSB_REG]);
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coulomb_write_reg(LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG,&writeData[LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG]);
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coulomb_write_reg(LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG,&writeData[LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG]);
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coulomb_write_reg(LTC2943_VOLTAGE_THRESH_LOW_MSB_REG,&writeData[LTC2943_VOLTAGE_THRESH_LOW_MSB_REG]);
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coulomb_write_reg(LTC2943_VOLTAGE_THRESH_LOW_LSB_REG,&writeData[LTC2943_VOLTAGE_THRESH_LOW_LSB_REG]);
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coulomb_write_reg(LTC2943_CURRENT_THRESH_HIGH_MSB_REG,&writeData[LTC2943_CURRENT_THRESH_HIGH_MSB_REG]);
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coulomb_write_reg(LTC2943_CURRENT_THRESH_HIGH_LSB_REG,&writeData[LTC2943_CURRENT_THRESH_HIGH_LSB_REG]);
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coulomb_write_reg(LTC2943_CURRENT_THRESH_LOW_MSB_REG,&writeData[LTC2943_CURRENT_THRESH_LOW_MSB_REG]);
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coulomb_write_reg(LTC2943_CURRENT_THRESH_LOW_LSB_REG,&writeData[LTC2943_CURRENT_THRESH_LOW_LSB_REG]);
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coulomb_write_reg(LTC2943_TEMPERATURE_THRESH_HIGH_REG,&writeData[LTC2943_TEMPERATURE_THRESH_HIGH_REG]);
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coulomb_write_reg(LTC2943_TEMPERATURE_THRESH_LOW_REG,&writeData[LTC2943_TEMPERATURE_THRESH_LOW_REG]);
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}
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return coulomb.ready;
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}
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/**
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* @description: 将读取到的 状态类的 寄存器数据转换成真实数据
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* @param {type}
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* @return:
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*/
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void coulomb_read_status_raw_to_actual()
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{
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//status 转换到 对应位
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coulomb.read.actual.status.current_alret = ((coulomb.read.raw.status>>6) & 0b00000001) ? true : false;
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coulomb.read.actual.status.accumulated_charge_alert = ((coulomb.read.raw.status>>5) & 0b00000001) ? true : false;
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coulomb.read.actual.status.temperature_alret = ((coulomb.read.raw.status>>4) & 0b00000001) ? true : false;
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coulomb.read.actual.status.charge_alert_H = ((coulomb.read.raw.status>>3) & 0b00000001) ? true : false;
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coulomb.read.actual.status.charge_alert_L = ((coulomb.read.raw.status>>2) & 0b00000001) ? true : false;
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coulomb.read.actual.status.voltage_alert = ((coulomb.read.raw.status>>1) & 0b00000001) ? true : false;
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coulomb.read.actual.status.uvlo_alert = ( coulomb.read.raw.status & 0b00000001) ? true : false;
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//剩余电量转换
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coulomb.read.actual.accumulated_charge = (coulomb.read.raw.accumulated_charge - 32767) / 32767.0 * 30 ;
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//电压转换
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coulomb.read.actual.voltage = coulomb.read.raw.voltage / 65535.0 *23.6;
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//电流转换
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coulomb.read.actual.current = (coulomb.read.raw.current - 32767) / 32767.0 * 30 ;
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//温度转换
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coulomb.read.actual.temperature = (coulomb.read.raw.temperature / 65535.0 * 510 ) - 273.15;
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}
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/**
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* @description: 将读取到的 配置类的 寄存器数据转换成真实参数
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* @param {type}
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* @return:
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*/
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void coulomb_read_config_raw_to_actual()
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{
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//control寄存器转换到对应位
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coulomb.read.actual.control.adc_mode = ((coulomb.read.raw.control >> 6) & 0b00000011);
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coulomb.read.actual.control.prescaler = ((coulomb.read.raw.control >> 3) & 0b00000111);
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coulomb.read.actual.control.alcc_configure = ((coulomb.read.raw.control >> 1) & 0b00000011);
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coulomb.read.actual.control.shutdown = ( coulomb.read.raw.control & 0b00000001);
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//阈值累计充电转换
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coulomb.read.actual.charge_threshold_H = (coulomb.read.raw.charge_threshold_H - 32767) / 32767.0 * 30;
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coulomb.read.actual.charge_threshold_L = (coulomb.read.raw.charge_threshold_L - 32767) / 32767.0 * 30;
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//电压阈值转换
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coulomb.read.actual.voltage_threshold_H = coulomb.read.raw.voltage_threshold_H / 65535.0 *23.6;
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coulomb.read.actual.voltage_threshold_L = coulomb.read.raw.voltage_threshold_L / 65535.0 *23.6;
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//电流阈值转换
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coulomb.read.actual.current_threshold_H = (coulomb.read.raw.current_threshold_H - 32767) / 32767.0 * 30 ;
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coulomb.read.actual.current_threshold_L = (coulomb.read.raw.current_threshold_L - 32767) / 32767.0 * 30 ;
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//温度阈值转换
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coulomb.read.actual.temperature_threshold_H = (coulomb.read.raw.temperature_threshold_H / 65535.0 * 510 ) - 273.15;
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coulomb.read.actual.temperature_threshold_L = (coulomb.read.raw.temperature_threshold_L / 65535.0 * 510 ) - 273.15;
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}
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//读取原始寄存器数据
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/**
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* @description: 读取状态类和配置类的寄存器（即所有寄存器）
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* @param {type}
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* @return:
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*/
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bool coulomb_read_status_and_config()
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{
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uint8_t readData[COULOMB_REG_NUM];
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coulomb.ready = (is_coulomb_ready()==HAL_OK) ? true : false;
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if(coulomb.ready)
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{
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HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,0,1,readData, 1, 10);
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HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,0,COULOMB_REG_NUM,&readData[1], COULOMB_REG_NUM, 100);
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coulomb.read.raw.status = readData[LTC2943_STATUS_REG];
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coulomb.read.raw.control = readData[LTC2943_CONTROL_REG];
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coulomb.read.raw.accumulated_charge = uint8_to_uint16(readData,LTC2943_ACCUM_CHARGE_MSB_REG,LTC2943_ACCUM_CHARGE_LSB_REG);
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coulomb.read.raw.charge_threshold_H = uint8_to_uint16(readData,LTC2943_CHARGE_THRESH_HIGH_MSB_REG,LTC2943_CHARGE_THRESH_HIGH_LSB_REG);
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coulomb.read.raw.charge_threshold_L = uint8_to_uint16(readData,LTC2943_CHARGE_THRESH_LOW_MSB_REG,LTC2943_CHARGE_THRESH_LOW_LSB_REG);
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coulomb.read.raw.voltage = uint8_to_uint16(readData,LTC2943_VOLTAGE_MSB_REG,LTC2943_VOLTAGE_LSB_REG);
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coulomb.read.raw.voltage_threshold_H = uint8_to_uint16(readData,LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG,LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG);
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coulomb.read.raw.voltage_threshold_L = uint8_to_uint16(readData,LTC2943_VOLTAGE_THRESH_LOW_MSB_REG,LTC2943_VOLTAGE_THRESH_LOW_LSB_REG);
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coulomb.read.raw.current = uint8_to_uint16(readData,LTC2943_CURRENT_MSB_REG,LTC2943_CURRENT_LSB_REG);
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coulomb.read.raw.current_threshold_H = uint8_to_uint16(readData,LTC2943_CURRENT_THRESH_HIGH_MSB_REG,LTC2943_CURRENT_THRESH_HIGH_LSB_REG);
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coulomb.read.raw.current_threshold_L = uint8_to_uint16(readData,LTC2943_CURRENT_THRESH_LOW_MSB_REG,LTC2943_CURRENT_THRESH_LOW_LSB_REG);
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coulomb.read.raw.temperature = uint8_to_uint16(readData,LTC2943_TEMPERATURE_MSB_REG,LTC2943_TEMPERATURE_LSB_REG);
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coulomb.read.raw.temperature_threshold_H = (readData[LTC2943_TEMPERATURE_THRESH_HIGH_REG]<<8) | 0x00;//补充低字节
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coulomb.read.raw.temperature_threshold_L = (readData[LTC2943_TEMPERATURE_THRESH_LOW_REG]<<8) | 0x00;//补充低字节
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}
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return coulomb.ready;
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}
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bool coulomb_read_alcc()
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{
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return HAL_GPIO_ReadPin(PMB_CLOULOMB_ALCC_GPIO_Port,PMB_CLOULOMB_ALCC_Pin);
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}
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