完成 库仑计参数读写和参数转换的功能

master
ThinkPad 2020-04-29 17:49:27 +08:00
parent 6c1bb009cc
commit bfa947a1d4
3 changed files with 352 additions and 94 deletions

View File

@ -190,25 +190,16 @@ void StartLedBlinkTask(void *argument)
/* Infinite loop */ /* Infinite loop */
for(;;) for(;;)
{ {
if(NaviKit.system_runing == true) if(HAL_GPIO_ReadPin(LED_RUN_GPIO_Port,LED_RUN_Pin) == GPIO_PIN_SET)
{//整板开机状态 {//LED处于熄灭状态
HAL_GPIO_TogglePin(LED_RUN_GPIO_Port,LED_RUN_Pin); osDelay(NaviKit.system_runing ? 400 : 2000);
osDelay(100); HAL_GPIO_WritePin(LED_RUN_GPIO_Port,LED_RUN_Pin,GPIO_PIN_RESET);//点亮
} }
else else
{//整板关机状态 {//LED处于点亮状态
if(HAL_GPIO_ReadPin(LED_RUN_GPIO_Port,LED_RUN_Pin) == GPIO_PIN_SET) osDelay(20);
{//LED处于熄灭状态 HAL_GPIO_WritePin(LED_RUN_GPIO_Port,LED_RUN_Pin,GPIO_PIN_SET);//熄灭
HAL_GPIO_WritePin(LED_RUN_GPIO_Port,LED_RUN_Pin,GPIO_PIN_RESET);
}
else
{//LED处于点亮状态
HAL_GPIO_WritePin(LED_RUN_GPIO_Port,LED_RUN_Pin,GPIO_PIN_SET);
osDelay(2000);
}
} }
osDelay(50);
} }
/* USER CODE END StartLedBlinkTask */ /* USER CODE END StartLedBlinkTask */
} }
@ -317,10 +308,18 @@ void StartButtonDetect(void *argument)
void StartCoulombRead(void *argument) void StartCoulombRead(void *argument)
{ {
/* USER CODE BEGIN StartCoulombRead */ /* USER CODE BEGIN StartCoulombRead */
coulomb_write_config_init();
coulomb_write_config_actual_to_raw();
coulomb_write_config();
//读寄存器方法
/* Infinite loop */ /* Infinite loop */
for(;;) for(;;)
{ {
coulomb_read_status(); coulomb_read_status_and_config();
coulomb_read_status_raw_to_actual();
coulomb_read_config_raw_to_actual();
if(NaviKit.system_runing) if(NaviKit.system_runing)
osDelay(500); osDelay(500);
else else

View File

@ -3,71 +3,299 @@
* @Author: CK.Zh * @Author: CK.Zh
* @Date: 2020-04-27 18:01:58 * @Date: 2020-04-27 18:01:58
* @LastEditors: CK.Zh * @LastEditors: CK.Zh
* @LastEditTime: 2020-04-28 16:42:03 * @LastEditTime: 2020-04-29 17:49:01
*/ */
#include "coulomb.h" #include "coulomb.h"
coulomb_t coulomb; coulomb_t coulomb;
//bool is_coulomb_ready()
//{
//// HAL_I2C_IsDeviceReady(hi2c1,COULOMB_ADDR);
//}
//静态方法,检测设备是否就绪
static HAL_StatusTypeDef is_coulomb_ready()
{
return HAL_I2C_IsDeviceReady(&hi2c1,COULOMB_ADDR,3,20);
}
//静态方法,写寄存器
static HAL_StatusTypeDef coulomb_write_reg(uint8_t addr,uint8_t* pData) static HAL_StatusTypeDef coulomb_write_reg(uint8_t addr,uint8_t* pData)
{ {
return HAL_I2C_Mem_Write(&hi2c1,COULOMB_ADDR ,addr,1,pData, 1, 10); return HAL_I2C_Mem_Write(&hi2c1,COULOMB_ADDR ,addr,1,pData, 1, 10);
} }
static uint16_t coulomb_uint8_to_uint16(uint8_t *pData,uint8_t msb,uint8_t lsb) //静态方法,读寄存器
static HAL_StatusTypeDef coulomb_read_reg(uint8_t addr,uint8_t* pData)
{ {
return ((pData[msb]<<8) | pData[lsb]); return HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,addr,1,pData, 1, 10);
} }
HAL_StatusTypeDef coulomb_read_status() /**
* @description:
* @param pData
* @param msbIndex
* @param lsbIndex
* @return:
*/
static uint16_t uint8_to_uint16(uint8_t *pData,uint8_t msbIndex,uint8_t lsbIndex)
{ {
uint8_t ctl_reg_set = 0xEc; return ((pData[msbIndex]<<8) | pData[lsbIndex]);
coulomb_write_reg(LTC2943_CONTROL_REG,&ctl_reg_set); }
/**
* @description:
* @param data
* @return:
*/
static uint8_t uint16_to_uint8_msb(uint16_t data)
{
return ((data>>8) & 0xff);
}
/**
* @description:
* @param data
* @return:
*/
static uint8_t uint16_to_uint8_lsb(uint16_t data)
{
return ((data ) & 0xff);
}
/**
* @description: ()
* @param {type}
* @return:
*/
// void coulomb_write_config_init_default()
// {
// coulomb.write.raw.control = 0xEC;
// coulomb.write.raw.accumulated_charge = 0x7fff;
// coulomb.write.raw.charge_threshold_H = 0xffff;
// coulomb.write.raw.charge_threshold_L = 0x0000;
// coulomb.write.raw.voltage_threshold_H = 0xffff;
// coulomb.write.raw.voltage_threshold_L = 0x0000;
// coulomb.write.raw.current_threshold_H = 0xffff;
// coulomb.write.raw.current_threshold_L = 0x0000;
// coulomb.write.raw.temperature_threshold_H = 0xff;
// coulomb.write.raw.temperature_threshold_L = 0x00;
// }
/**
* @description:
* @param {type}
* @return:
*/
void coulomb_write_config_init()
{
//控制寄存器配置
coulomb.write.actual.control.adc_mode = 0b00;
coulomb.write.actual.control.prescaler = 0b111;
coulomb.write.actual.control.alcc_configure = 0b10;
coulomb.write.actual.control.shutdown = 0b00;
uint8_t pData[0x18]; //剩余容量重写入
HAL_StatusTypeDef ret; coulomb.write.actual.accumulated_charge = 2;
HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,0,1,&pData, 1, 10); //充电阈值上限
ret = HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,0,0x18,&pData[1], 0x18, 100); coulomb.write.actual.charge_threshold_H = 20;
//充电阈值下限
coulomb.write.actual.charge_threshold_L = 1;
if(ret == HAL_OK ) //电压阈值上限
coulomb.write.actual.voltage_threshold_H = 15;
//电压阈值下限
coulomb.write.actual.voltage_threshold_L = 9.5;
//电流阈值上限
coulomb.write.actual.current_threshold_H = 10;
//电流阈值下限
coulomb.write.actual.current_threshold_L = -10;
//温度阈值上限
coulomb.write.actual.temperature_threshold_H = 60;
//温度阈值下限
coulomb.write.actual.temperature_threshold_L = -15;
}
/**
* @description:
* @param {type}
* @return:
*/
void coulomb_write_config_actual_to_raw()
{
//控制寄存器
coulomb.write.raw.control = (coulomb.write.actual.control.adc_mode << 6) | \
(coulomb.write.actual.control.prescaler << 3) | \
(coulomb.write.actual.control.alcc_configure << 1) | \
(coulomb.write.actual.control.shutdown ) ;
//累计电量
coulomb.write.raw.accumulated_charge = (uint16_t)((coulomb.write.actual.accumulated_charge / 30.0) * 32767 + 32767);
//充电阈值上限
coulomb.write.raw.charge_threshold_H = (uint16_t)((coulomb.write.actual.charge_threshold_H / 30.0) * 32767 + 32767);
//充电阈值下限
coulomb.write.raw.charge_threshold_L = (uint16_t)((coulomb.write.actual.charge_threshold_L / 30.0) * 32767 + 32767);
//电压阈值上限
coulomb.write.raw.voltage_threshold_H = (uint16_t)((coulomb.write.actual.voltage_threshold_H / 23.6) * 65535);
//电压阈值下限
coulomb.write.raw.voltage_threshold_L = (uint16_t)((coulomb.write.actual.voltage_threshold_L / 23.6) * 65535);
//电流阈值上限
coulomb.write.raw.current_threshold_H = (uint16_t)((coulomb.write.actual.current_threshold_H / 30.0) * 32767 + 32767);
//电流阈值下限
coulomb.write.raw.current_threshold_L = (uint16_t)((coulomb.write.actual.current_threshold_L / 30.0) * 32767 + 32767);
//温度阈值上限
coulomb.write.raw.temperature_threshold_H = ((uint16_t)((coulomb.write.actual.temperature_threshold_H + 273.15) / 510.0 * 65535)) & 0xFF00;//清空低字节
//温度阈值下限
coulomb.write.raw.temperature_threshold_L = ((uint16_t)((coulomb.write.actual.temperature_threshold_L + 273.15) / 510.0 * 65535)) & 0xFF00;//清空低字节
}
/**
* @description:
* @param {type}
* @return:
*/
bool coulomb_write_config()
{
uint8_t writeData[COULOMB_REG_NUM] = {0};
//控制寄存器
writeData[LTC2943_CONTROL_REG] = coulomb.write.raw.control;
//累计电量
writeData[LTC2943_ACCUM_CHARGE_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.accumulated_charge);
writeData[LTC2943_ACCUM_CHARGE_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.accumulated_charge);
//充电阈值上限
writeData[LTC2943_CHARGE_THRESH_HIGH_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.charge_threshold_H);
writeData[LTC2943_CHARGE_THRESH_HIGH_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.charge_threshold_H);
//充电阈值下限
writeData[LTC2943_CHARGE_THRESH_LOW_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.charge_threshold_L);
writeData[LTC2943_CHARGE_THRESH_LOW_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.charge_threshold_L);
//电压阈值上限
writeData[LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.voltage_threshold_H);
writeData[LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.voltage_threshold_H);
//电压阈值下限
writeData[LTC2943_VOLTAGE_THRESH_LOW_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.voltage_threshold_L);
writeData[LTC2943_VOLTAGE_THRESH_LOW_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.voltage_threshold_L);
//电流阈值上限
writeData[LTC2943_CURRENT_THRESH_HIGH_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.current_threshold_H);
writeData[LTC2943_CURRENT_THRESH_HIGH_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.current_threshold_H);
//电流阈值下限
writeData[LTC2943_CURRENT_THRESH_LOW_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.current_threshold_L);
writeData[LTC2943_CURRENT_THRESH_LOW_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.current_threshold_L);
//温度阈值上限
writeData[LTC2943_TEMPERATURE_THRESH_HIGH_REG] = uint16_to_uint8_msb(coulomb.write.raw.temperature_threshold_H);
//温度阈值下限
writeData[LTC2943_TEMPERATURE_THRESH_LOW_REG] = uint16_to_uint8_msb(coulomb.write.raw.temperature_threshold_L);
coulomb.ready = (is_coulomb_ready()==HAL_OK) ? true : false;
if(coulomb.ready)
{ {
coulomb.raw.status = pData[LTC2943_STATUS_REG]; coulomb_write_reg(LTC2943_CONTROL_REG,&writeData[LTC2943_CONTROL_REG]);
coulomb.raw.control = pData[LTC2943_CONTROL_REG]; coulomb_write_reg(LTC2943_ACCUM_CHARGE_MSB_REG,&writeData[LTC2943_ACCUM_CHARGE_MSB_REG]);
coulomb_write_reg(LTC2943_ACCUM_CHARGE_LSB_REG,&writeData[LTC2943_ACCUM_CHARGE_LSB_REG]);
coulomb.raw.accumulated_charge =coulomb_uint8_to_uint16(pData,LTC2943_ACCUM_CHARGE_MSB_REG,LTC2943_ACCUM_CHARGE_LSB_REG); coulomb_write_reg(LTC2943_CHARGE_THRESH_HIGH_MSB_REG,&writeData[LTC2943_CHARGE_THRESH_HIGH_MSB_REG]);
coulomb.raw.charge_threshold_H = coulomb_uint8_to_uint16(pData,LTC2943_CHARGE_THRESH_HIGH_MSB_REG,LTC2943_CHARGE_THRESH_HIGH_LSB_REG); coulomb_write_reg(LTC2943_CHARGE_THRESH_HIGH_LSB_REG,&writeData[LTC2943_CHARGE_THRESH_HIGH_LSB_REG]);
coulomb.raw.charge_threshold_L = coulomb_uint8_to_uint16(pData,LTC2943_CHARGE_THRESH_LOW_MSB_REG,LTC2943_CHARGE_THRESH_LOW_LSB_REG); coulomb_write_reg(LTC2943_CHARGE_THRESH_LOW_MSB_REG,&writeData[LTC2943_CHARGE_THRESH_LOW_MSB_REG]);
coulomb_write_reg(LTC2943_CHARGE_THRESH_LOW_LSB_REG,&writeData[LTC2943_CHARGE_THRESH_LOW_LSB_REG]);
coulomb.raw.voltage = coulomb_uint8_to_uint16(pData,LTC2943_VOLTAGE_MSB_REG,LTC2943_VOLTAGE_LSB_REG); coulomb_write_reg(LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG,&writeData[LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG]);
coulomb.raw.voltage_threshold_H = coulomb_uint8_to_uint16(pData,LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG,LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG); coulomb_write_reg(LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG,&writeData[LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG]);
coulomb.raw.voltage_threshold_L = coulomb_uint8_to_uint16(pData,LTC2943_VOLTAGE_THRESH_LOW_MSB_REG,LTC2943_VOLTAGE_THRESH_LOW_LSB_REG); coulomb_write_reg(LTC2943_VOLTAGE_THRESH_LOW_MSB_REG,&writeData[LTC2943_VOLTAGE_THRESH_LOW_MSB_REG]);
coulomb_write_reg(LTC2943_VOLTAGE_THRESH_LOW_LSB_REG,&writeData[LTC2943_VOLTAGE_THRESH_LOW_LSB_REG]);
coulomb.raw.current = coulomb_uint8_to_uint16(pData,LTC2943_CURRENT_MSB_REG,LTC2943_CURRENT_LSB_REG); coulomb_write_reg(LTC2943_CURRENT_THRESH_HIGH_MSB_REG,&writeData[LTC2943_CURRENT_THRESH_HIGH_MSB_REG]);
coulomb.raw.current_threshold_H = coulomb_uint8_to_uint16(pData,LTC2943_CURRENT_THRESH_HIGH_MSB_REG,LTC2943_CURRENT_THRESH_HIGH_LSB_REG); coulomb_write_reg(LTC2943_CURRENT_THRESH_HIGH_LSB_REG,&writeData[LTC2943_CURRENT_THRESH_HIGH_LSB_REG]);
coulomb.raw.current_threshold_L = coulomb_uint8_to_uint16(pData,LTC2943_CURRENT_THRESH_LOW_MSB_REG,LTC2943_CURRENT_THRESH_LOW_LSB_REG); coulomb_write_reg(LTC2943_CURRENT_THRESH_LOW_MSB_REG,&writeData[LTC2943_CURRENT_THRESH_LOW_MSB_REG]);
coulomb_write_reg(LTC2943_CURRENT_THRESH_LOW_LSB_REG,&writeData[LTC2943_CURRENT_THRESH_LOW_LSB_REG]);
coulomb.raw.temperature = coulomb_uint8_to_uint16(pData,LTC2943_TEMPERATURE_MSB_REG,LTC2943_TEMPERATURE_LSB_REG); coulomb_write_reg(LTC2943_TEMPERATURE_THRESH_HIGH_REG,&writeData[LTC2943_TEMPERATURE_THRESH_HIGH_REG]);
coulomb.raw.temperature_threshold_H = pData[LTC2943_TEMPERATURE_THRESH_HIGH_REG]; coulomb_write_reg(LTC2943_TEMPERATURE_THRESH_LOW_REG,&writeData[LTC2943_TEMPERATURE_THRESH_LOW_REG]);
coulomb.raw.temperature_threshold_L = pData[LTC2943_TEMPERATURE_THRESH_LOW_REG];
coulomb.actual.status.current_alret = ((coulomb.raw.status>>6) & 0x01) ? true : false;
coulomb.actual.status.accumulated_charge_alert = ((coulomb.raw.status>>5) & 0x01) ? true : false;
coulomb.actual.status.temperature_alret = ((coulomb.raw.status>>4) & 0x01) ? true : false;
coulomb.actual.status.charge_alert_H = ((coulomb.raw.status>>3) & 0x01) ? true : false;
coulomb.actual.status.charge_alert_L = ((coulomb.raw.status>>2) & 0x01) ? true : false;
coulomb.actual.status.voltage_alert = ((coulomb.raw.status>>1) & 0x01) ? true : false;
coulomb.actual.status.uvlo_alert = ( coulomb.raw.status & 0x01) ? true : false;
coulomb.actual.voltage = coulomb.raw.voltage / 65535.0 *23.6; //电压转换
coulomb.actual.current = (coulomb.raw.current - 32767) / 32767.0 * 30 ; //电流转换
// coulomb.actual.temperature = coulomb.raw.temperature / 65535 *23.6; //温度转换
} }
return ret; return coulomb.ready;
}
/**
* @description:
* @param {type}
* @return:
*/
void coulomb_read_status_raw_to_actual()
{
//status 转换到 对应位
coulomb.read.actual.status.current_alret = ((coulomb.read.raw.status>>6) & 0b00000001) ? true : false;
coulomb.read.actual.status.accumulated_charge_alert = ((coulomb.read.raw.status>>5) & 0b00000001) ? true : false;
coulomb.read.actual.status.temperature_alret = ((coulomb.read.raw.status>>4) & 0b00000001) ? true : false;
coulomb.read.actual.status.charge_alert_H = ((coulomb.read.raw.status>>3) & 0b00000001) ? true : false;
coulomb.read.actual.status.charge_alert_L = ((coulomb.read.raw.status>>2) & 0b00000001) ? true : false;
coulomb.read.actual.status.voltage_alert = ((coulomb.read.raw.status>>1) & 0b00000001) ? true : false;
coulomb.read.actual.status.uvlo_alert = ( coulomb.read.raw.status & 0b00000001) ? true : false;
//剩余电量转换
coulomb.read.actual.accumulated_charge = (coulomb.read.raw.accumulated_charge - 32767) / 32767.0 * 30 ;
//电压转换
coulomb.read.actual.voltage = coulomb.read.raw.voltage / 65535.0 *23.6;
//电流转换
coulomb.read.actual.current = (coulomb.read.raw.current - 32767) / 32767.0 * 30 ;
//温度转换
coulomb.read.actual.temperature = (coulomb.read.raw.temperature / 65535.0 * 510 ) - 273.15;
}
/**
* @description:
* @param {type}
* @return:
*/
void coulomb_read_config_raw_to_actual()
{
//control寄存器转换到对应位
coulomb.read.actual.control.adc_mode = ((coulomb.read.raw.control >> 6) & 0b00000011);
coulomb.read.actual.control.prescaler = ((coulomb.read.raw.control >> 3) & 0b00000111);
coulomb.read.actual.control.alcc_configure = ((coulomb.read.raw.control >> 1) & 0b00000011);
coulomb.read.actual.control.shutdown = ( coulomb.read.raw.control & 0b00000001);
//阈值累计充电转换
coulomb.read.actual.charge_threshold_H = (coulomb.read.raw.charge_threshold_H - 32767) / 32767.0 * 30;
coulomb.read.actual.charge_threshold_L = (coulomb.read.raw.charge_threshold_L - 32767) / 32767.0 * 30;
//电压阈值转换
coulomb.read.actual.voltage_threshold_H = coulomb.read.raw.voltage_threshold_H / 65535.0 *23.6;
coulomb.read.actual.voltage_threshold_L = coulomb.read.raw.voltage_threshold_L / 65535.0 *23.6;
//电流阈值转换
coulomb.read.actual.current_threshold_H = (coulomb.read.raw.current_threshold_H - 32767) / 32767.0 * 30 ;
coulomb.read.actual.current_threshold_L = (coulomb.read.raw.current_threshold_L - 32767) / 32767.0 * 30 ;
//温度阈值转换
coulomb.read.actual.temperature_threshold_H = (coulomb.read.raw.temperature_threshold_H / 65535.0 * 510 ) - 273.15;
coulomb.read.actual.temperature_threshold_L = (coulomb.read.raw.temperature_threshold_L / 65535.0 * 510 ) - 273.15;
}
//读取原始寄存器数据
/**
* @description:
* @param {type}
* @return:
*/
bool coulomb_read_status_and_config()
{
uint8_t readData[COULOMB_REG_NUM];
coulomb.ready = (is_coulomb_ready()==HAL_OK) ? true : false;
if(coulomb.ready)
{
HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,0,1,readData, 1, 10);
HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,0,COULOMB_REG_NUM,&readData[1], COULOMB_REG_NUM, 100);
coulomb.read.raw.status = readData[LTC2943_STATUS_REG];
coulomb.read.raw.control = readData[LTC2943_CONTROL_REG];
coulomb.read.raw.accumulated_charge = uint8_to_uint16(readData,LTC2943_ACCUM_CHARGE_MSB_REG,LTC2943_ACCUM_CHARGE_LSB_REG);
coulomb.read.raw.charge_threshold_H = uint8_to_uint16(readData,LTC2943_CHARGE_THRESH_HIGH_MSB_REG,LTC2943_CHARGE_THRESH_HIGH_LSB_REG);
coulomb.read.raw.charge_threshold_L = uint8_to_uint16(readData,LTC2943_CHARGE_THRESH_LOW_MSB_REG,LTC2943_CHARGE_THRESH_LOW_LSB_REG);
coulomb.read.raw.voltage = uint8_to_uint16(readData,LTC2943_VOLTAGE_MSB_REG,LTC2943_VOLTAGE_LSB_REG);
coulomb.read.raw.voltage_threshold_H = uint8_to_uint16(readData,LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG,LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG);
coulomb.read.raw.voltage_threshold_L = uint8_to_uint16(readData,LTC2943_VOLTAGE_THRESH_LOW_MSB_REG,LTC2943_VOLTAGE_THRESH_LOW_LSB_REG);
coulomb.read.raw.current = uint8_to_uint16(readData,LTC2943_CURRENT_MSB_REG,LTC2943_CURRENT_LSB_REG);
coulomb.read.raw.current_threshold_H = uint8_to_uint16(readData,LTC2943_CURRENT_THRESH_HIGH_MSB_REG,LTC2943_CURRENT_THRESH_HIGH_LSB_REG);
coulomb.read.raw.current_threshold_L = uint8_to_uint16(readData,LTC2943_CURRENT_THRESH_LOW_MSB_REG,LTC2943_CURRENT_THRESH_LOW_LSB_REG);
coulomb.read.raw.temperature = uint8_to_uint16(readData,LTC2943_TEMPERATURE_MSB_REG,LTC2943_TEMPERATURE_LSB_REG);
coulomb.read.raw.temperature_threshold_H = (readData[LTC2943_TEMPERATURE_THRESH_HIGH_REG]<<8) | 0x00;//补充低字节
coulomb.read.raw.temperature_threshold_L = (readData[LTC2943_TEMPERATURE_THRESH_LOW_REG]<<8) | 0x00;//补充低字节
}
return coulomb.ready;
}
bool coulomb_read_alcc()
{
return HAL_GPIO_ReadPin(COULOMB_ALCC_GPIO_Port,COULOMB_ALCC_Pin);
} }
//
//bool coulomb_read_alcc()
//{
// return HAL_GPIO_ReadPin(COULOMB_ALCC_GPIO_Port,COULOMB_ALCC_Pin);
//}

View File

@ -12,6 +12,7 @@
#include "i2c.h" #include "i2c.h"
#include "stm32f1xx_hal.h" #include "stm32f1xx_hal.h"
#define COULOMB_REG_NUM 0x18
#define COULOMB_ADDR (0x64 << 1) //device address #define COULOMB_ADDR (0x64 << 1) //device address
//#define COULOMB_WRITE_CMD 0x00 //coulomb write command //#define COULOMB_WRITE_CMD 0x00 //coulomb write command
//#define COULOMB_READ_CMD 0x01 //coulomb read command //#define COULOMB_READ_CMD 0x01 //coulomb read command
@ -41,14 +42,13 @@
#define LTC2943_TEMPERATURE_THRESH_HIGH_REG 0x16 #define LTC2943_TEMPERATURE_THRESH_HIGH_REG 0x16
#define LTC2943_TEMPERATURE_THRESH_LOW_REG 0x17 #define LTC2943_TEMPERATURE_THRESH_LOW_REG 0x17
typedef struct typedef struct
{ {//原始数据(寄存器数据)
struct
{//原始数据
uint8_t status; uint8_t status;
uint8_t control; uint8_t control;
uint16_t accumulated_charge; uint16_t accumulated_charge; //剩余电量
uint16_t charge_threshold_H; //充电阈值上限 uint16_t charge_threshold_H; //充电阈值上限
uint16_t charge_threshold_L; //充电阈值下限 uint16_t charge_threshold_L; //充电阈值下限
@ -61,11 +61,11 @@ typedef struct
uint16_t current_threshold_L; //电流阈值下限 uint16_t current_threshold_L; //电流阈值下限
uint16_t temperature; //温度 uint16_t temperature; //温度
uint8_t temperature_threshold_H; //温度阈值上限 uint16_t temperature_threshold_H; //温度阈值上限(只有高字节有效)
uint8_t temperature_threshold_L; //温度阈值下限 uint16_t temperature_threshold_L; //温度阈值下限(只有高字节有效)
}raw; }ltc2943_raw_t;
struct typedef struct
{//实际数据(转换后) {//实际数据(转换后,物理量纲)
struct struct
{ {
bool current_alret; bool current_alret;
@ -76,29 +76,60 @@ typedef struct
bool voltage_alert; bool voltage_alert;
bool uvlo_alert; bool uvlo_alert;
}status; }status;
float accumulated_charge; struct
float charge_threshold_H; //充电阈值上限 {
float charge_threshold_L; //充电阈值下限 uint8_t adc_mode;
uint8_t prescaler;
uint8_t alcc_configure;
bool shutdown;
}control;
float accumulated_charge; //Ah 剩余容量
float charge_threshold_H; //Ah 充电阈值上限
float charge_threshold_L; //Ah 充电阈值下限
float voltage; //电压 float voltage; //V 电压
float voltage_threshold_H; //电压阈值上限 float voltage_threshold_H; //V 电压阈值上限
float voltage_threshold_L; //电压阈值下限 float voltage_threshold_L; //V 电压阈值下限
float current; //电流 float current; //A 电流
float current_threshold_H; //电流阈值上限 float current_threshold_H; //A 电流阈值上限
float current_threshold_L; //电流阈值下限 float current_threshold_L; //A 电流阈值下限
float temperature; //温度 float temperature; //℃ 温度
float temperature_threshold_H; //温度阈值上限 float temperature_threshold_H; //℃ 温度阈值上限
float temperature_threshold_L; //温度阈值下限 float temperature_threshold_L; //℃ 温度阈值下限
}actual; }ltc2943_actual_t;
typedef struct
{
ltc2943_raw_t raw;
ltc2943_actual_t actual;
}ltc2943_t;
typedef struct
{
bool ready; //设备是否就绪
ltc2943_t write;
ltc2943_t read;
}coulomb_t; }coulomb_t;
extern coulomb_t coulomb; extern coulomb_t coulomb;
//bool is_coulomb_ready(); //静态方法
static HAL_StatusTypeDef is_coulomb_ready();
static HAL_StatusTypeDef coulomb_write_reg(uint8_t addr,uint8_t* pData); static HAL_StatusTypeDef coulomb_write_reg(uint8_t addr,uint8_t* pData);
static HAL_StatusTypeDef coulomb_read_reg(uint8_t addr,uint8_t* pData); static HAL_StatusTypeDef coulomb_read_reg(uint8_t addr,uint8_t* pData);
HAL_StatusTypeDef coulomb_read_status(); static uint16_t uint8_to_uint16(uint8_t *pData,uint8_t msbIndex,uint8_t lsbIndex);
//bool coulomb_read_alcc(); static uint8_t uint16_to_uint8_msb(uint16_t data);
//写配置方法
void coulomb_write_config_init();
void coulomb_write_config_actual_to_raw();
bool coulomb_write_config();
//读寄存器方法
bool coulomb_read_status_and_config();
void coulomb_read_status_raw_to_actual();
void coulomb_read_config_raw_to_actual();
bool coulomb_read_alcc();
#endif /* _COULOMB_H_ */ #endif /* _COULOMB_H_ */