完成 库仑计参数读写和参数转换的功能
parent
6c1bb009cc
commit
bfa947a1d4
Core/Src
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@ -190,25 +190,16 @@ void StartLedBlinkTask(void *argument)
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/* Infinite loop */
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for(;;)
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{
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if(NaviKit.system_runing == true)
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{//整板开机状态
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HAL_GPIO_TogglePin(LED_RUN_GPIO_Port,LED_RUN_Pin);
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osDelay(100);
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if(HAL_GPIO_ReadPin(LED_RUN_GPIO_Port,LED_RUN_Pin) == GPIO_PIN_SET)
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{//LED处于熄灭状态
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osDelay(NaviKit.system_runing ? 400 : 2000);
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HAL_GPIO_WritePin(LED_RUN_GPIO_Port,LED_RUN_Pin,GPIO_PIN_RESET);//点亮
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}
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else
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{//整板关机状态
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if(HAL_GPIO_ReadPin(LED_RUN_GPIO_Port,LED_RUN_Pin) == GPIO_PIN_SET)
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{//LED处于熄灭状态
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HAL_GPIO_WritePin(LED_RUN_GPIO_Port,LED_RUN_Pin,GPIO_PIN_RESET);
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}
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else
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{//LED处于点亮状态
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HAL_GPIO_WritePin(LED_RUN_GPIO_Port,LED_RUN_Pin,GPIO_PIN_SET);
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osDelay(2000);
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}
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{//LED处于点亮状态
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osDelay(20);
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HAL_GPIO_WritePin(LED_RUN_GPIO_Port,LED_RUN_Pin,GPIO_PIN_SET);//熄灭
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}
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osDelay(50);
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}
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/* USER CODE END StartLedBlinkTask */
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}
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@ -317,10 +308,18 @@ void StartButtonDetect(void *argument)
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void StartCoulombRead(void *argument)
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{
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/* USER CODE BEGIN StartCoulombRead */
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coulomb_write_config_init();
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coulomb_write_config_actual_to_raw();
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coulomb_write_config();
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//读寄存器方法
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/* Infinite loop */
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for(;;)
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{
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coulomb_read_status();
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coulomb_read_status_and_config();
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coulomb_read_status_raw_to_actual();
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coulomb_read_config_raw_to_actual();
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if(NaviKit.system_runing)
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osDelay(500);
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else
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@ -3,71 +3,299 @@
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* @Author: CK.Zh
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* @Date: 2020-04-27 18:01:58
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* @LastEditors: CK.Zh
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* @LastEditTime: 2020-04-28 16:42:03
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* @LastEditTime: 2020-04-29 17:49:01
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*/
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#include "coulomb.h"
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coulomb_t coulomb;
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//bool is_coulomb_ready()
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//{
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//// HAL_I2C_IsDeviceReady(hi2c1,COULOMB_ADDR);
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//}
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//静态方法,检测设备是否就绪
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static HAL_StatusTypeDef is_coulomb_ready()
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{
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return HAL_I2C_IsDeviceReady(&hi2c1,COULOMB_ADDR,3,20);
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}
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//静态方法,写寄存器
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static HAL_StatusTypeDef coulomb_write_reg(uint8_t addr,uint8_t* pData)
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{
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return HAL_I2C_Mem_Write(&hi2c1,COULOMB_ADDR ,addr,1,pData, 1, 10);
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}
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static uint16_t coulomb_uint8_to_uint16(uint8_t *pData,uint8_t msb,uint8_t lsb)
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//静态方法,读寄存器
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static HAL_StatusTypeDef coulomb_read_reg(uint8_t addr,uint8_t* pData)
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{
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return ((pData[msb]<<8) | pData[lsb]);
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return HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,addr,1,pData, 1, 10);
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}
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HAL_StatusTypeDef coulomb_read_status()
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/**
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* @description: 静态方法,字节拼接
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* @param pData 数组指针
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* @param msbIndex 高字节在数组中的位置
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* @param lsbIndex 低字节在数组中的位置
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* @return:
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*/
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static uint16_t uint8_to_uint16(uint8_t *pData,uint8_t msbIndex,uint8_t lsbIndex)
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{
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uint8_t ctl_reg_set = 0xEc;
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coulomb_write_reg(LTC2943_CONTROL_REG,&ctl_reg_set);
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return ((pData[msbIndex]<<8) | pData[lsbIndex]);
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}
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/**
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* @description: 静态方法,字节拆解
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* @param data
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* @return:
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*/
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static uint8_t uint16_to_uint8_msb(uint16_t data)
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{
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return ((data>>8) & 0xff);
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}
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/**
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* @description: 静态方法,字节拆解
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* @param data
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* @return:
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*/
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static uint8_t uint16_to_uint8_lsb(uint16_t data)
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{
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return ((data ) & 0xff);
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}
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/**
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* @description: 初始化配置参数(寄存器上电后的缺省值)
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* @param {type}
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* @return:
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*/
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// void coulomb_write_config_init_default()
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// {
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// coulomb.write.raw.control = 0xEC;
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// coulomb.write.raw.accumulated_charge = 0x7fff;
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// coulomb.write.raw.charge_threshold_H = 0xffff;
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// coulomb.write.raw.charge_threshold_L = 0x0000;
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// coulomb.write.raw.voltage_threshold_H = 0xffff;
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// coulomb.write.raw.voltage_threshold_L = 0x0000;
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// coulomb.write.raw.current_threshold_H = 0xffff;
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// coulomb.write.raw.current_threshold_L = 0x0000;
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// coulomb.write.raw.temperature_threshold_H = 0xff;
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// coulomb.write.raw.temperature_threshold_L = 0x00;
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// }
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/**
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* @description: 初始化配置参数
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* @param {type}
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* @return:
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*/
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void coulomb_write_config_init()
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{
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//控制寄存器配置
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coulomb.write.actual.control.adc_mode = 0b00;
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coulomb.write.actual.control.prescaler = 0b111;
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coulomb.write.actual.control.alcc_configure = 0b10;
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coulomb.write.actual.control.shutdown = 0b00;
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uint8_t pData[0x18];
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HAL_StatusTypeDef ret;
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//剩余容量重写入
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coulomb.write.actual.accumulated_charge = 2;
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HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,0,1,&pData, 1, 10);
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ret = HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,0,0x18,&pData[1], 0x18, 100);
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//充电阈值上限
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coulomb.write.actual.charge_threshold_H = 20;
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//充电阈值下限
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coulomb.write.actual.charge_threshold_L = 1;
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if(ret == HAL_OK )
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//电压阈值上限
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coulomb.write.actual.voltage_threshold_H = 15;
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//电压阈值下限
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coulomb.write.actual.voltage_threshold_L = 9.5;
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//电流阈值上限
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coulomb.write.actual.current_threshold_H = 10;
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//电流阈值下限
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coulomb.write.actual.current_threshold_L = -10;
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//温度阈值上限
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coulomb.write.actual.temperature_threshold_H = 60;
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//温度阈值下限
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coulomb.write.actual.temperature_threshold_L = -15;
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}
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/**
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* @description: 将准备写入的目标参数转化成寄存器格式
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* @param {type}
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* @return:
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*/
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void coulomb_write_config_actual_to_raw()
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{
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//控制寄存器
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coulomb.write.raw.control = (coulomb.write.actual.control.adc_mode << 6) | \
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(coulomb.write.actual.control.prescaler << 3) | \
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(coulomb.write.actual.control.alcc_configure << 1) | \
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(coulomb.write.actual.control.shutdown ) ;
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//累计电量
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coulomb.write.raw.accumulated_charge = (uint16_t)((coulomb.write.actual.accumulated_charge / 30.0) * 32767 + 32767);
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//充电阈值上限
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coulomb.write.raw.charge_threshold_H = (uint16_t)((coulomb.write.actual.charge_threshold_H / 30.0) * 32767 + 32767);
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//充电阈值下限
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coulomb.write.raw.charge_threshold_L = (uint16_t)((coulomb.write.actual.charge_threshold_L / 30.0) * 32767 + 32767);
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//电压阈值上限
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coulomb.write.raw.voltage_threshold_H = (uint16_t)((coulomb.write.actual.voltage_threshold_H / 23.6) * 65535);
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//电压阈值下限
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coulomb.write.raw.voltage_threshold_L = (uint16_t)((coulomb.write.actual.voltage_threshold_L / 23.6) * 65535);
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//电流阈值上限
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coulomb.write.raw.current_threshold_H = (uint16_t)((coulomb.write.actual.current_threshold_H / 30.0) * 32767 + 32767);
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//电流阈值下限
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coulomb.write.raw.current_threshold_L = (uint16_t)((coulomb.write.actual.current_threshold_L / 30.0) * 32767 + 32767);
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//温度阈值上限
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coulomb.write.raw.temperature_threshold_H = ((uint16_t)((coulomb.write.actual.temperature_threshold_H + 273.15) / 510.0 * 65535)) & 0xFF00;//清空低字节
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//温度阈值下限
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coulomb.write.raw.temperature_threshold_L = ((uint16_t)((coulomb.write.actual.temperature_threshold_L + 273.15) / 510.0 * 65535)) & 0xFF00;//清空低字节
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}
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/**
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* @description: 写入寄存器配置
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* @param {type}
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* @return:
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*/
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bool coulomb_write_config()
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{
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uint8_t writeData[COULOMB_REG_NUM] = {0};
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//控制寄存器
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writeData[LTC2943_CONTROL_REG] = coulomb.write.raw.control;
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//累计电量
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writeData[LTC2943_ACCUM_CHARGE_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.accumulated_charge);
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writeData[LTC2943_ACCUM_CHARGE_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.accumulated_charge);
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//充电阈值上限
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writeData[LTC2943_CHARGE_THRESH_HIGH_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.charge_threshold_H);
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writeData[LTC2943_CHARGE_THRESH_HIGH_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.charge_threshold_H);
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//充电阈值下限
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writeData[LTC2943_CHARGE_THRESH_LOW_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.charge_threshold_L);
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writeData[LTC2943_CHARGE_THRESH_LOW_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.charge_threshold_L);
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//电压阈值上限
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writeData[LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.voltage_threshold_H);
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writeData[LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.voltage_threshold_H);
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//电压阈值下限
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writeData[LTC2943_VOLTAGE_THRESH_LOW_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.voltage_threshold_L);
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writeData[LTC2943_VOLTAGE_THRESH_LOW_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.voltage_threshold_L);
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//电流阈值上限
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writeData[LTC2943_CURRENT_THRESH_HIGH_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.current_threshold_H);
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writeData[LTC2943_CURRENT_THRESH_HIGH_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.current_threshold_H);
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//电流阈值下限
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writeData[LTC2943_CURRENT_THRESH_LOW_MSB_REG] = uint16_to_uint8_msb(coulomb.write.raw.current_threshold_L);
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writeData[LTC2943_CURRENT_THRESH_LOW_LSB_REG] = uint16_to_uint8_lsb(coulomb.write.raw.current_threshold_L);
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//温度阈值上限
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writeData[LTC2943_TEMPERATURE_THRESH_HIGH_REG] = uint16_to_uint8_msb(coulomb.write.raw.temperature_threshold_H);
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//温度阈值下限
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writeData[LTC2943_TEMPERATURE_THRESH_LOW_REG] = uint16_to_uint8_msb(coulomb.write.raw.temperature_threshold_L);
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coulomb.ready = (is_coulomb_ready()==HAL_OK) ? true : false;
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if(coulomb.ready)
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{
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coulomb.raw.status = pData[LTC2943_STATUS_REG];
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coulomb.raw.control = pData[LTC2943_CONTROL_REG];
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coulomb.raw.accumulated_charge =coulomb_uint8_to_uint16(pData,LTC2943_ACCUM_CHARGE_MSB_REG,LTC2943_ACCUM_CHARGE_LSB_REG);
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coulomb.raw.charge_threshold_H = coulomb_uint8_to_uint16(pData,LTC2943_CHARGE_THRESH_HIGH_MSB_REG,LTC2943_CHARGE_THRESH_HIGH_LSB_REG);
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coulomb.raw.charge_threshold_L = coulomb_uint8_to_uint16(pData,LTC2943_CHARGE_THRESH_LOW_MSB_REG,LTC2943_CHARGE_THRESH_LOW_LSB_REG);
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coulomb.raw.voltage = coulomb_uint8_to_uint16(pData,LTC2943_VOLTAGE_MSB_REG,LTC2943_VOLTAGE_LSB_REG);
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coulomb.raw.voltage_threshold_H = coulomb_uint8_to_uint16(pData,LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG,LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG);
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coulomb.raw.voltage_threshold_L = coulomb_uint8_to_uint16(pData,LTC2943_VOLTAGE_THRESH_LOW_MSB_REG,LTC2943_VOLTAGE_THRESH_LOW_LSB_REG);
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coulomb.raw.current = coulomb_uint8_to_uint16(pData,LTC2943_CURRENT_MSB_REG,LTC2943_CURRENT_LSB_REG);
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coulomb.raw.current_threshold_H = coulomb_uint8_to_uint16(pData,LTC2943_CURRENT_THRESH_HIGH_MSB_REG,LTC2943_CURRENT_THRESH_HIGH_LSB_REG);
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coulomb.raw.current_threshold_L = coulomb_uint8_to_uint16(pData,LTC2943_CURRENT_THRESH_LOW_MSB_REG,LTC2943_CURRENT_THRESH_LOW_LSB_REG);
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coulomb.raw.temperature = coulomb_uint8_to_uint16(pData,LTC2943_TEMPERATURE_MSB_REG,LTC2943_TEMPERATURE_LSB_REG);
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coulomb.raw.temperature_threshold_H = pData[LTC2943_TEMPERATURE_THRESH_HIGH_REG];
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coulomb.raw.temperature_threshold_L = pData[LTC2943_TEMPERATURE_THRESH_LOW_REG];
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coulomb.actual.status.current_alret = ((coulomb.raw.status>>6) & 0x01) ? true : false;
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coulomb.actual.status.accumulated_charge_alert = ((coulomb.raw.status>>5) & 0x01) ? true : false;
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coulomb.actual.status.temperature_alret = ((coulomb.raw.status>>4) & 0x01) ? true : false;
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coulomb.actual.status.charge_alert_H = ((coulomb.raw.status>>3) & 0x01) ? true : false;
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coulomb.actual.status.charge_alert_L = ((coulomb.raw.status>>2) & 0x01) ? true : false;
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coulomb.actual.status.voltage_alert = ((coulomb.raw.status>>1) & 0x01) ? true : false;
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coulomb.actual.status.uvlo_alert = ( coulomb.raw.status & 0x01) ? true : false;
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coulomb.actual.voltage = coulomb.raw.voltage / 65535.0 *23.6; //电压转换
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coulomb.actual.current = (coulomb.raw.current - 32767) / 32767.0 * 30 ; //电流转换
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// coulomb.actual.temperature = coulomb.raw.temperature / 65535 *23.6; //温度转换
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coulomb_write_reg(LTC2943_CONTROL_REG,&writeData[LTC2943_CONTROL_REG]);
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coulomb_write_reg(LTC2943_ACCUM_CHARGE_MSB_REG,&writeData[LTC2943_ACCUM_CHARGE_MSB_REG]);
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coulomb_write_reg(LTC2943_ACCUM_CHARGE_LSB_REG,&writeData[LTC2943_ACCUM_CHARGE_LSB_REG]);
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coulomb_write_reg(LTC2943_CHARGE_THRESH_HIGH_MSB_REG,&writeData[LTC2943_CHARGE_THRESH_HIGH_MSB_REG]);
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coulomb_write_reg(LTC2943_CHARGE_THRESH_HIGH_LSB_REG,&writeData[LTC2943_CHARGE_THRESH_HIGH_LSB_REG]);
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coulomb_write_reg(LTC2943_CHARGE_THRESH_LOW_MSB_REG,&writeData[LTC2943_CHARGE_THRESH_LOW_MSB_REG]);
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coulomb_write_reg(LTC2943_CHARGE_THRESH_LOW_LSB_REG,&writeData[LTC2943_CHARGE_THRESH_LOW_LSB_REG]);
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coulomb_write_reg(LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG,&writeData[LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG]);
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coulomb_write_reg(LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG,&writeData[LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG]);
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coulomb_write_reg(LTC2943_VOLTAGE_THRESH_LOW_MSB_REG,&writeData[LTC2943_VOLTAGE_THRESH_LOW_MSB_REG]);
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coulomb_write_reg(LTC2943_VOLTAGE_THRESH_LOW_LSB_REG,&writeData[LTC2943_VOLTAGE_THRESH_LOW_LSB_REG]);
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coulomb_write_reg(LTC2943_CURRENT_THRESH_HIGH_MSB_REG,&writeData[LTC2943_CURRENT_THRESH_HIGH_MSB_REG]);
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coulomb_write_reg(LTC2943_CURRENT_THRESH_HIGH_LSB_REG,&writeData[LTC2943_CURRENT_THRESH_HIGH_LSB_REG]);
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coulomb_write_reg(LTC2943_CURRENT_THRESH_LOW_MSB_REG,&writeData[LTC2943_CURRENT_THRESH_LOW_MSB_REG]);
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coulomb_write_reg(LTC2943_CURRENT_THRESH_LOW_LSB_REG,&writeData[LTC2943_CURRENT_THRESH_LOW_LSB_REG]);
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coulomb_write_reg(LTC2943_TEMPERATURE_THRESH_HIGH_REG,&writeData[LTC2943_TEMPERATURE_THRESH_HIGH_REG]);
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coulomb_write_reg(LTC2943_TEMPERATURE_THRESH_LOW_REG,&writeData[LTC2943_TEMPERATURE_THRESH_LOW_REG]);
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}
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return ret;
|
||||
return coulomb.ready;
|
||||
}
|
||||
/**
|
||||
* @description: 将读取到的 状态类的 寄存器数据转换成真实数据
|
||||
* @param {type}
|
||||
* @return:
|
||||
*/
|
||||
void coulomb_read_status_raw_to_actual()
|
||||
{
|
||||
//status 转换到 对应位
|
||||
coulomb.read.actual.status.current_alret = ((coulomb.read.raw.status>>6) & 0b00000001) ? true : false;
|
||||
coulomb.read.actual.status.accumulated_charge_alert = ((coulomb.read.raw.status>>5) & 0b00000001) ? true : false;
|
||||
coulomb.read.actual.status.temperature_alret = ((coulomb.read.raw.status>>4) & 0b00000001) ? true : false;
|
||||
coulomb.read.actual.status.charge_alert_H = ((coulomb.read.raw.status>>3) & 0b00000001) ? true : false;
|
||||
coulomb.read.actual.status.charge_alert_L = ((coulomb.read.raw.status>>2) & 0b00000001) ? true : false;
|
||||
coulomb.read.actual.status.voltage_alert = ((coulomb.read.raw.status>>1) & 0b00000001) ? true : false;
|
||||
coulomb.read.actual.status.uvlo_alert = ( coulomb.read.raw.status & 0b00000001) ? true : false;
|
||||
|
||||
//剩余电量转换
|
||||
coulomb.read.actual.accumulated_charge = (coulomb.read.raw.accumulated_charge - 32767) / 32767.0 * 30 ;
|
||||
//电压转换
|
||||
coulomb.read.actual.voltage = coulomb.read.raw.voltage / 65535.0 *23.6;
|
||||
//电流转换
|
||||
coulomb.read.actual.current = (coulomb.read.raw.current - 32767) / 32767.0 * 30 ;
|
||||
//温度转换
|
||||
coulomb.read.actual.temperature = (coulomb.read.raw.temperature / 65535.0 * 510 ) - 273.15;
|
||||
}
|
||||
/**
|
||||
* @description: 将读取到的 配置类的 寄存器数据转换成真实参数
|
||||
* @param {type}
|
||||
* @return:
|
||||
*/
|
||||
void coulomb_read_config_raw_to_actual()
|
||||
{
|
||||
//control寄存器转换到对应位
|
||||
coulomb.read.actual.control.adc_mode = ((coulomb.read.raw.control >> 6) & 0b00000011);
|
||||
coulomb.read.actual.control.prescaler = ((coulomb.read.raw.control >> 3) & 0b00000111);
|
||||
coulomb.read.actual.control.alcc_configure = ((coulomb.read.raw.control >> 1) & 0b00000011);
|
||||
coulomb.read.actual.control.shutdown = ( coulomb.read.raw.control & 0b00000001);
|
||||
|
||||
//阈值累计充电转换
|
||||
coulomb.read.actual.charge_threshold_H = (coulomb.read.raw.charge_threshold_H - 32767) / 32767.0 * 30;
|
||||
coulomb.read.actual.charge_threshold_L = (coulomb.read.raw.charge_threshold_L - 32767) / 32767.0 * 30;
|
||||
//电压阈值转换
|
||||
coulomb.read.actual.voltage_threshold_H = coulomb.read.raw.voltage_threshold_H / 65535.0 *23.6;
|
||||
coulomb.read.actual.voltage_threshold_L = coulomb.read.raw.voltage_threshold_L / 65535.0 *23.6;
|
||||
//电流阈值转换
|
||||
coulomb.read.actual.current_threshold_H = (coulomb.read.raw.current_threshold_H - 32767) / 32767.0 * 30 ;
|
||||
coulomb.read.actual.current_threshold_L = (coulomb.read.raw.current_threshold_L - 32767) / 32767.0 * 30 ;
|
||||
//温度阈值转换
|
||||
coulomb.read.actual.temperature_threshold_H = (coulomb.read.raw.temperature_threshold_H / 65535.0 * 510 ) - 273.15;
|
||||
coulomb.read.actual.temperature_threshold_L = (coulomb.read.raw.temperature_threshold_L / 65535.0 * 510 ) - 273.15;
|
||||
}
|
||||
//读取原始寄存器数据
|
||||
/**
|
||||
* @description: 读取状态类和配置类的寄存器(即所有寄存器)
|
||||
* @param {type}
|
||||
* @return:
|
||||
*/
|
||||
bool coulomb_read_status_and_config()
|
||||
{
|
||||
uint8_t readData[COULOMB_REG_NUM];
|
||||
coulomb.ready = (is_coulomb_ready()==HAL_OK) ? true : false;
|
||||
if(coulomb.ready)
|
||||
{
|
||||
HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,0,1,readData, 1, 10);
|
||||
HAL_I2C_Mem_Read(&hi2c1,COULOMB_ADDR ,0,COULOMB_REG_NUM,&readData[1], COULOMB_REG_NUM, 100);
|
||||
|
||||
coulomb.read.raw.status = readData[LTC2943_STATUS_REG];
|
||||
coulomb.read.raw.control = readData[LTC2943_CONTROL_REG];
|
||||
|
||||
coulomb.read.raw.accumulated_charge = uint8_to_uint16(readData,LTC2943_ACCUM_CHARGE_MSB_REG,LTC2943_ACCUM_CHARGE_LSB_REG);
|
||||
coulomb.read.raw.charge_threshold_H = uint8_to_uint16(readData,LTC2943_CHARGE_THRESH_HIGH_MSB_REG,LTC2943_CHARGE_THRESH_HIGH_LSB_REG);
|
||||
coulomb.read.raw.charge_threshold_L = uint8_to_uint16(readData,LTC2943_CHARGE_THRESH_LOW_MSB_REG,LTC2943_CHARGE_THRESH_LOW_LSB_REG);
|
||||
|
||||
coulomb.read.raw.voltage = uint8_to_uint16(readData,LTC2943_VOLTAGE_MSB_REG,LTC2943_VOLTAGE_LSB_REG);
|
||||
coulomb.read.raw.voltage_threshold_H = uint8_to_uint16(readData,LTC2943_VOLTAGE_THRESH_HIGH_MSB_REG,LTC2943_VOLTAGE_THRESH_HIGH_LSB_REG);
|
||||
coulomb.read.raw.voltage_threshold_L = uint8_to_uint16(readData,LTC2943_VOLTAGE_THRESH_LOW_MSB_REG,LTC2943_VOLTAGE_THRESH_LOW_LSB_REG);
|
||||
|
||||
coulomb.read.raw.current = uint8_to_uint16(readData,LTC2943_CURRENT_MSB_REG,LTC2943_CURRENT_LSB_REG);
|
||||
coulomb.read.raw.current_threshold_H = uint8_to_uint16(readData,LTC2943_CURRENT_THRESH_HIGH_MSB_REG,LTC2943_CURRENT_THRESH_HIGH_LSB_REG);
|
||||
coulomb.read.raw.current_threshold_L = uint8_to_uint16(readData,LTC2943_CURRENT_THRESH_LOW_MSB_REG,LTC2943_CURRENT_THRESH_LOW_LSB_REG);
|
||||
|
||||
coulomb.read.raw.temperature = uint8_to_uint16(readData,LTC2943_TEMPERATURE_MSB_REG,LTC2943_TEMPERATURE_LSB_REG);
|
||||
coulomb.read.raw.temperature_threshold_H = (readData[LTC2943_TEMPERATURE_THRESH_HIGH_REG]<<8) | 0x00;//补充低字节
|
||||
coulomb.read.raw.temperature_threshold_L = (readData[LTC2943_TEMPERATURE_THRESH_LOW_REG]<<8) | 0x00;//补充低字节
|
||||
}
|
||||
return coulomb.ready;
|
||||
}
|
||||
|
||||
bool coulomb_read_alcc()
|
||||
{
|
||||
return HAL_GPIO_ReadPin(COULOMB_ALCC_GPIO_Port,COULOMB_ALCC_Pin);
|
||||
}
|
||||
//
|
||||
//bool coulomb_read_alcc()
|
||||
//{
|
||||
// return HAL_GPIO_ReadPin(COULOMB_ALCC_GPIO_Port,COULOMB_ALCC_Pin);
|
||||
//}
|
||||
|
|
|
@ -12,6 +12,7 @@
|
|||
#include "i2c.h"
|
||||
#include "stm32f1xx_hal.h"
|
||||
|
||||
#define COULOMB_REG_NUM 0x18
|
||||
#define COULOMB_ADDR (0x64 << 1) //device address
|
||||
//#define COULOMB_WRITE_CMD 0x00 //coulomb write command
|
||||
//#define COULOMB_READ_CMD 0x01 //coulomb read command
|
||||
|
@ -41,14 +42,13 @@
|
|||
#define LTC2943_TEMPERATURE_THRESH_HIGH_REG 0x16
|
||||
#define LTC2943_TEMPERATURE_THRESH_LOW_REG 0x17
|
||||
|
||||
typedef struct
|
||||
{
|
||||
struct
|
||||
{//原始数据
|
||||
|
||||
typedef struct
|
||||
{//原始数据(寄存器数据)
|
||||
uint8_t status;
|
||||
uint8_t control;
|
||||
|
||||
uint16_t accumulated_charge;
|
||||
uint16_t accumulated_charge; //剩余电量
|
||||
uint16_t charge_threshold_H; //充电阈值上限
|
||||
uint16_t charge_threshold_L; //充电阈值下限
|
||||
|
||||
|
@ -61,11 +61,11 @@ typedef struct
|
|||
uint16_t current_threshold_L; //电流阈值下限
|
||||
|
||||
uint16_t temperature; //温度
|
||||
uint8_t temperature_threshold_H; //温度阈值上限
|
||||
uint8_t temperature_threshold_L; //温度阈值下限
|
||||
}raw;
|
||||
struct
|
||||
{//实际数据(转换后)
|
||||
uint16_t temperature_threshold_H; //温度阈值上限(只有高字节有效)
|
||||
uint16_t temperature_threshold_L; //温度阈值下限(只有高字节有效)
|
||||
}ltc2943_raw_t;
|
||||
typedef struct
|
||||
{//实际数据(转换后,物理量纲)
|
||||
struct
|
||||
{
|
||||
bool current_alret;
|
||||
|
@ -76,29 +76,60 @@ typedef struct
|
|||
bool voltage_alert;
|
||||
bool uvlo_alert;
|
||||
}status;
|
||||
float accumulated_charge;
|
||||
float charge_threshold_H; //充电阈值上限
|
||||
float charge_threshold_L; //充电阈值下限
|
||||
struct
|
||||
{
|
||||
uint8_t adc_mode;
|
||||
uint8_t prescaler;
|
||||
uint8_t alcc_configure;
|
||||
bool shutdown;
|
||||
}control;
|
||||
float accumulated_charge; //Ah 剩余容量
|
||||
float charge_threshold_H; //Ah 充电阈值上限
|
||||
float charge_threshold_L; //Ah 充电阈值下限
|
||||
|
||||
float voltage; //电压
|
||||
float voltage_threshold_H; //电压阈值上限
|
||||
float voltage_threshold_L; //电压阈值下限
|
||||
float voltage; //V 电压
|
||||
float voltage_threshold_H; //V 电压阈值上限
|
||||
float voltage_threshold_L; //V 电压阈值下限
|
||||
|
||||
float current; //电流
|
||||
float current_threshold_H; //电流阈值上限
|
||||
float current_threshold_L; //电流阈值下限
|
||||
float current; //A 电流
|
||||
float current_threshold_H; //A 电流阈值上限
|
||||
float current_threshold_L; //A 电流阈值下限
|
||||
|
||||
float temperature; //温度
|
||||
float temperature_threshold_H; //温度阈值上限
|
||||
float temperature_threshold_L; //温度阈值下限
|
||||
}actual;
|
||||
float temperature; //℃ 温度
|
||||
float temperature_threshold_H; //℃ 温度阈值上限
|
||||
float temperature_threshold_L; //℃ 温度阈值下限
|
||||
}ltc2943_actual_t;
|
||||
|
||||
|
||||
typedef struct
|
||||
{
|
||||
ltc2943_raw_t raw;
|
||||
ltc2943_actual_t actual;
|
||||
}ltc2943_t;
|
||||
|
||||
typedef struct
|
||||
{
|
||||
bool ready; //设备是否就绪
|
||||
ltc2943_t write;
|
||||
ltc2943_t read;
|
||||
}coulomb_t;
|
||||
extern coulomb_t coulomb;
|
||||
|
||||
//bool is_coulomb_ready();
|
||||
//静态方法
|
||||
static HAL_StatusTypeDef is_coulomb_ready();
|
||||
static HAL_StatusTypeDef coulomb_write_reg(uint8_t addr,uint8_t* pData);
|
||||
static HAL_StatusTypeDef coulomb_read_reg(uint8_t addr,uint8_t* pData);
|
||||
HAL_StatusTypeDef coulomb_read_status();
|
||||
//bool coulomb_read_alcc();
|
||||
static uint16_t uint8_to_uint16(uint8_t *pData,uint8_t msbIndex,uint8_t lsbIndex);
|
||||
static uint8_t uint16_to_uint8_msb(uint16_t data);
|
||||
|
||||
//写配置方法
|
||||
void coulomb_write_config_init();
|
||||
void coulomb_write_config_actual_to_raw();
|
||||
bool coulomb_write_config();
|
||||
//读寄存器方法
|
||||
bool coulomb_read_status_and_config();
|
||||
void coulomb_read_status_raw_to_actual();
|
||||
void coulomb_read_config_raw_to_actual();
|
||||
bool coulomb_read_alcc();
|
||||
|
||||
#endif /* _COULOMB_H_ */
|
||||
|
|
Loading…
Reference in New Issue